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  5. 2N7635-GA

GeneSiC Semiconductor - 2N7635-GA

KEY Part #: K6404292

2N7635-GA Pricing (USD) [8725pcs Stock]

  • 10 pcs$112.26577
Part Number:
2N7635-GA
Manufacturer:
GeneSiC Semiconductor
Detailed description:
TRANS SJT 650V 4A TO-257.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor 2N7635-GA electronic components. 2N7635-GA can be shipped within 24 hours after order. If you have any demands for 2N7635-GA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2N7635-GA Product Attributes

Part Number : 2N7635-GA
Manufacturer : GeneSiC Semiconductor
Description : TRANS SJT 650V 4A TO-257
Series : -
Part Status : Obsolete
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 415 mOhm @ 4A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 35V
FET Feature : -
Power Dissipation (Max) : 47W (Tc)
Operating Temperature : -55°C ~ 225°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-257
Package / Case : TO-257-3
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