Rohm Semiconductor - RFN1LAM6STR

KEY Part #: K6453481

RFN1LAM6STR Pricing (USD) [1067595pcs Stock]

  • 1 pcs$0.03830
  • 3,000 pcs$0.03811
  • 6,000 pcs$0.03430
  • 15,000 pcs$0.03049
  • 30,000 pcs$0.02858
  • 75,000 pcs$0.02534

Part Number:
RFN1LAM6STR
Manufacturer:
Rohm Semiconductor
Detailed description:
DIODE GEN PURP 600V 800MA PMDTM. Diodes - General Purpose, Power, Switching 700V Vr 0.8A Io Fast Recovery Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Diodes - RF, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Rohm Semiconductor RFN1LAM6STR electronic components. RFN1LAM6STR can be shipped within 24 hours after order. If you have any demands for RFN1LAM6STR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RFN1LAM6STR Product Attributes

Part Number : RFN1LAM6STR
Manufacturer : Rohm Semiconductor
Description : DIODE GEN PURP 600V 800MA PMDTM
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 800mA
Voltage - Forward (Vf) (Max) @ If : 1.45V @ 800mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Current - Reverse Leakage @ Vr : 1µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : SOD-128
Supplier Device Package : PMDTM
Operating Temperature - Junction : 150°C (Max)

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