Vishay Semiconductor Diodes Division - GP10M-4007EHE3/54

KEY Part #: K6434186

GP10M-4007EHE3/54 Pricing (USD) [762568pcs Stock]

1 pcs$0.04850
11,000 pcs$0.04396

Part Number:: GP10M-4007EHE3/54

Manufacturer:: Vishay Semiconductor Diodes Division

Detailed description:: DIODE GEN PURP 1KV 1A DO204AL.

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...

Competitive Advantage:: We specialize in Vishay Semiconductor Diodes Division GP10M-4007EHE3/54 electronic components. GP10M-4007EHE3/54 can be shipped within 24 hours after order. If you have any demands for GP10M-4007EHE3/54, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

GP10M-4007EHE3/54 Product Attributes

Part Number : GP10M-4007EHE3/54

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 1KV 1A DO204AL

Series : -

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 1000V

Current - Average Rectified (Io) : 1A

Voltage - Forward (Vf) (Max) @ If : -

Speed : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Current - Reverse Leakage @ Vr : -

Capacitance @ Vr, F : -

Mounting Type : Through Hole

Package / Case : DO-204AL, DO-41, Axial

Supplier Device Package : DO-204AL (DO-41)

Operating Temperature - Junction : -

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