ON Semiconductor - NTNS3A65PZT5G

KEY Part #: K6416035

NTNS3A65PZT5G Pricing (USD) [1000228pcs Stock]

  • 1 pcs$0.04066
  • 8,000 pcs$0.04046

Part Number:
NTNS3A65PZT5G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 20V 0.281A SOT883.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Special Purpose and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor NTNS3A65PZT5G electronic components. NTNS3A65PZT5G can be shipped within 24 hours after order. If you have any demands for NTNS3A65PZT5G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTNS3A65PZT5G Product Attributes

Part Number : NTNS3A65PZT5G
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 20V 0.281A SOT883
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 281mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 1.3 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1.1nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 44pF @ 10V
FET Feature : -
Power Dissipation (Max) : 155mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-883 (XDFN3) (1x0.6)
Package / Case : SC-101, SOT-883

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