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  5. APT65GP60L2DQ2G

Microsemi Corporation - APT65GP60L2DQ2G

KEY Part #: K6423218

APT65GP60L2DQ2G Pricing (USD) [4947pcs Stock]

  • 1 pcs$10.29916
Part Number:
APT65GP60L2DQ2G
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 600V 198A 833W TO264.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Transistors - IGBTs - Single, Thyristors - TRIACs and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Microsemi Corporation APT65GP60L2DQ2G electronic components. APT65GP60L2DQ2G can be shipped within 24 hours after order. If you have any demands for APT65GP60L2DQ2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT65GP60L2DQ2G Product Attributes

Part Number : APT65GP60L2DQ2G
Manufacturer : Microsemi Corporation
Description : IGBT 600V 198A 833W TO264
Series : POWER MOS 7®
Part Status : Not For New Designs
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 198A
Current - Collector Pulsed (Icm) : 250A
Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 65A
Power - Max : 833W
Switching Energy : 605µJ (on), 895µJ (off)
Input Type : Standard
Gate Charge : 210nC
Td (on/off) @ 25°C : 30ns/90ns
Test Condition : 400V, 65A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-264-3, TO-264AA
Supplier Device Package : -

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