Part Number :
VS-GT50TP60N
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
IGBT 600V 85A 208W INT-A-PAK
Configuration :
Half Bridge
Voltage - Collector Emitter Breakdown (Max) :
600V
Current - Collector (Ic) (Max) :
85A
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 50A
Current - Collector Cutoff (Max) :
1mA
Input Capacitance (Cies) @ Vce :
3.03nF @ 30V
Operating Temperature :
175°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
INT-A-PAK (3 + 4)
Supplier Device Package :
INT-A-PAK