Vishay Semiconductor Diodes Division - VS-GT50TP60N

KEY Part #: K6533271

VS-GT50TP60N Pricing (USD) [535pcs Stock]

  • 1 pcs$86.84406
  • 24 pcs$71.23509

Part Number:
VS-GT50TP60N
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
IGBT 600V 85A 208W INT-A-PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - IGBTs - Modules, Transistors - JFETs, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Diodes - Rectifiers - Single and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-GT50TP60N electronic components. VS-GT50TP60N can be shipped within 24 hours after order. If you have any demands for VS-GT50TP60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GT50TP60N Product Attributes

Part Number : VS-GT50TP60N
Manufacturer : Vishay Semiconductor Diodes Division
Description : IGBT 600V 85A 208W INT-A-PAK
Series : -
Part Status : Active
IGBT Type : Trench
Configuration : Half Bridge
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 85A
Power - Max : 208W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 50A
Current - Collector Cutoff (Max) : 1mA
Input Capacitance (Cies) @ Vce : 3.03nF @ 30V
Input : Standard
NTC Thermistor : No
Operating Temperature : 175°C (TJ)
Mounting Type : Chassis Mount
Package / Case : INT-A-PAK (3 + 4)
Supplier Device Package : INT-A-PAK

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