Part Number :
TPCF8B01(TE85L,F,M
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET P-CH 20V 2.7A VS-8
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id :
1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
470pF @ 10V
FET Feature :
Schottky Diode (Isolated)
Power Dissipation (Max) :
330mW (Ta)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
VS-8 (2.9x1.5)
Package / Case :
8-SMD, Flat Lead