HAT2165H-EL-E Pricing (USD) [73406pcs Stock]
- 1 pcs$0.56782
- 2,500 pcs$0.56500
- Part Number:
- HAT2165H-EL-E
- Manufacturer:
- Renesas Electronics America
- Detailed description:
- MOSFET N-CH 30V 55A LFPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Diodes - Zener - Single, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Renesas Electronics America HAT2165H-EL-E electronic components. HAT2165H-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2165H-EL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HAT2165H-EL-E Product Attributes
Part Number :
HAT2165H-EL-E
Manufacturer :
Renesas Electronics America
Description :
MOSFET N-CH 30V 55A LFPAK
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.3 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5180pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
30W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
LFPAK
Package / Case :
SC-100, SOT-669
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