Manufacturer :
GeneSiC Semiconductor
Description :
DIODE SCHOTTKY 650V 4.3A TO276
Diode Type :
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) :
650V
Current - Average Rectified (Io) :
4.3A (DC)
Voltage - Forward (Vf) (Max) @ If :
1.65V @ 5A
Speed :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Current - Reverse Leakage @ Vr :
5µA @ 650V
Capacitance @ Vr, F :
274pF @ 1V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
TO-276AA
Supplier Device Package :
TO-276
Operating Temperature - Junction :
-55°C ~ 250°C