Vishay Siliconix - SISF00DN-T1-GE3

KEY Part #: K6525216

SISF00DN-T1-GE3 Pricing (USD) [134082pcs Stock]

  • 1 pcs$0.27586

Part Number:
SISF00DN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET DUAL N-CH 30V POWERPAK 12.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix SISF00DN-T1-GE3 electronic components. SISF00DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISF00DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISF00DN-T1-GE3 Product Attributes

Part Number : SISF00DN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET DUAL N-CH 30V POWERPAK 12
Series : TrenchFET® Gen IV
Part Status : Active
FET Type : 2 N-Channel (Dual) Common Drain
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 60A (Tc)
Rds On (Max) @ Id, Vgs : 5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 15V
Power - Max : 69.4W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® 1212-8SCD
Supplier Device Package : PowerPAK® 1212-8SCD

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