ZXM62N03GTA Pricing (USD) [13914pcs Stock]
- 1,000 pcs$0.14618
- Part Number:
- ZXM62N03GTA
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 30V ENHANCE SOT223.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXM62N03GTA electronic components. ZXM62N03GTA can be shipped within 24 hours after order. If you have any demands for ZXM62N03GTA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXM62N03GTA Product Attributes
Part Number :
ZXM62N03GTA
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 30V ENHANCE SOT223
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
3.4A (Ta), 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.6nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-223
Package / Case :
TO-261-4, TO-261AA
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