Vishay Semiconductor Diodes Division - VS-1N1200A

KEY Part #: K6440903

VS-1N1200A Pricing (USD) [20330pcs Stock]

  • 1 pcs$2.03603
  • 10 pcs$1.82714
  • 25 pcs$1.72719
  • 100 pcs$1.49697
  • 250 pcs$1.42020
  • 500 pcs$1.27435
  • 1,000 pcs$1.01963

Part Number:
VS-1N1200A
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 100V 12A DO203AA. Rectifiers 100 Volt 12 Amp
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-1N1200A electronic components. VS-1N1200A can be shipped within 24 hours after order. If you have any demands for VS-1N1200A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-1N1200A Product Attributes

Part Number : VS-1N1200A
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 100V 12A DO203AA
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Current - Average Rectified (Io) : 12A
Voltage - Forward (Vf) (Max) @ If : 1.35V @ 12A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 2.5mA @ 100V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AA, DO-4, Stud
Supplier Device Package : DO-203AA
Operating Temperature - Junction : -65°C ~ 200°C

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