IXYS - IXFA7N100P

KEY Part #: K6394808

IXFA7N100P Pricing (USD) [24024pcs Stock]

  • 1 pcs$1.98261
  • 50 pcs$1.97275

Part Number:
IXFA7N100P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1000V 7A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Diodes - Zener - Single, Transistors - Programmable Unijunction, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in IXYS IXFA7N100P electronic components. IXFA7N100P can be shipped within 24 hours after order. If you have any demands for IXFA7N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA7N100P Product Attributes

Part Number : IXFA7N100P
Manufacturer : IXYS
Description : MOSFET N-CH 1000V 7A D2PAK
Series : HiPerFET™, PolarP2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 47nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2590pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (IXFA)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB