Vishay Semiconductor Diodes Division - VS-HFA08TB120SL-M3

KEY Part #: K6471218

VS-HFA08TB120SL-M3 Pricing (USD) [94052pcs Stock]

  • 1 pcs$0.41574

Part Number:
VS-HFA08TB120SL-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE ARRAY GP 1200V 8A D2PAK. Diodes - General Purpose, Power, Switching 1200V 8A IF (TO-263AB) 130A IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division VS-HFA08TB120SL-M3 electronic components. VS-HFA08TB120SL-M3 can be shipped within 24 hours after order. If you have any demands for VS-HFA08TB120SL-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-HFA08TB120SL-M3 Product Attributes

Part Number : VS-HFA08TB120SL-M3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE ARRAY GP 1200V 8A D2PAK
Series : HEXFRED®
Part Status : Active
Diode Configuration : -
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) (per Diode) : -
Voltage - Forward (Vf) (Max) @ If : 4.3V @ 16A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 95ns
Current - Reverse Leakage @ Vr : 10µA @ 1200V
Operating Temperature - Junction : -55°C ~ 150°C
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB (D²PAK)

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