Vishay Semiconductor Diodes Division - GURB5H60-E3/81

KEY Part #: K6447305

GURB5H60-E3/81 Pricing (USD) [1469pcs Stock]

  • 1,600 pcs$0.27184

Part Number:
GURB5H60-E3/81
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 5A TO263AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division GURB5H60-E3/81 electronic components. GURB5H60-E3/81 can be shipped within 24 hours after order. If you have any demands for GURB5H60-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GURB5H60-E3/81 Product Attributes

Part Number : GURB5H60-E3/81
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 5A TO263AB
Series : -
Part Status : Obsolete
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 5A
Voltage - Forward (Vf) (Max) @ If : 1.8V @ 5A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 20µA @ 600V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : TO-263AB
Operating Temperature - Junction : -55°C ~ 150°C

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