[2794pcs Stock]
- Part Number:
- SPI11N65C3HKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 11A TO-262.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies SPI11N65C3HKSA1 electronic components. SPI11N65C3HKSA1 can be shipped within 24 hours after order. If you have any demands for SPI11N65C3HKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPI11N65C3HKSA1 Product Attributes
Part Number :
SPI11N65C3HKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 11A TO-262
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO262-3-1
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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