Vishay Siliconix - SISS40DN-T1-GE3

KEY Part #: K6420085

SISS40DN-T1-GE3 Pricing (USD) [158402pcs Stock]

  • 1 pcs$0.23350
  • 3,000 pcs$0.21927

Part Number:
SISS40DN-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 100V 36.5A PPAK 1212.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Programmable Unijunction, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Vishay Siliconix SISS40DN-T1-GE3 electronic components. SISS40DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS40DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SISS40DN-T1-GE3 Product Attributes

Part Number : SISS40DN-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 100V 36.5A PPAK 1212
Series : ThunderFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 36.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 21 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 24nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 845pF @ 50V
FET Feature : -
Power Dissipation (Max) : 3.7W (Ta), 52W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 1212-8S (3.3x3.3)
Package / Case : 8-PowerVDFN

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