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  5. FCPF099N65S3

ON Semiconductor - FCPF099N65S3

KEY Part #: K6397966

FCPF099N65S3 Pricing (USD) [22265pcs Stock]

  • 1 pcs$1.85094
Part Number:
FCPF099N65S3
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 650V 30A TO220F.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FCPF099N65S3 electronic components. FCPF099N65S3 can be shipped within 24 hours after order. If you have any demands for FCPF099N65S3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCPF099N65S3 Product Attributes

Part Number : FCPF099N65S3
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 650V 30A TO220F
Series : SuperFET® III
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs : 57nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 2310pF @ 400V
FET Feature : -
Power Dissipation (Max) : 43W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220F
Package / Case : TO-220-3 Full Pack

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