TSM70N1R4CH C5G Pricing (USD) [79931pcs Stock]
- 1 pcs$0.48918
- Part Number:
- TSM70N1R4CH C5G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET N-CH 700V 3.3A TO251.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays, Transistors - JFETs and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM70N1R4CH C5G electronic components. TSM70N1R4CH C5G can be shipped within 24 hours after order. If you have any demands for TSM70N1R4CH C5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM70N1R4CH C5G Product Attributes
Part Number :
TSM70N1R4CH C5G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CH 700V 3.3A TO251
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
700V
Current - Continuous Drain (Id) @ 25°C :
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.7nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
370pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
38W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-251 (IPAK)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
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