Vishay Siliconix - SQJQ466E-T1_GE3

KEY Part #: K6418433

SQJQ466E-T1_GE3 Pricing (USD) [63669pcs Stock]

  • 1 pcs$0.61411
  • 2,000 pcs$0.51781

Part Number:
SQJQ466E-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 60V 200A POWERPAK8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Diodes - Rectifiers - Single and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Vishay Siliconix SQJQ466E-T1_GE3 electronic components. SQJQ466E-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJQ466E-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJQ466E-T1_GE3 Product Attributes

Part Number : SQJQ466E-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 60V 200A POWERPAK8
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10210pF @ 25V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® 8 x 8
Package / Case : 8-PowerTDFN

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