Vishay Semiconductor Diodes Division - BYG23T-M3/TR3

KEY Part #: K6439800

BYG23T-M3/TR3 Pricing (USD) [592996pcs Stock]

  • 1 pcs$0.06237
  • 7,500 pcs$0.05703

Part Number:
BYG23T-M3/TR3
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE AVALANCHE 1300V 1A DO214AC. Rectifiers 1A,1300V,75NS, AvalancheUFSMD RECT
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - JFETs and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BYG23T-M3/TR3 electronic components. BYG23T-M3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG23T-M3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG23T-M3/TR3 Product Attributes

Part Number : BYG23T-M3/TR3
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE AVALANCHE 1300V 1A DO214AC
Series : -
Part Status : Active
Diode Type : Avalanche
Voltage - DC Reverse (Vr) (Max) : 1300V
Current - Average Rectified (Io) : 1A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.9V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 5µA @ 1300V
Capacitance @ Vr, F : 9pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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