Vishay Semiconductor Diodes Division - BAV21WS-HE3-18

KEY Part #: K6454448

BAV21WS-HE3-18 Pricing (USD) [2097832pcs Stock]

  • 1 pcs$0.01763
  • 10,000 pcs$0.01631

Part Number:
BAV21WS-HE3-18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 200V 250MA SOD323. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - IGBTs - Single, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAV21WS-HE3-18 electronic components. BAV21WS-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV21WS-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV21WS-HE3-18 Product Attributes

Part Number : BAV21WS-HE3-18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 200V 250MA SOD323
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Current - Average Rectified (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 200mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Current - Reverse Leakage @ Vr : 100nA @ 200V
Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : SC-76, SOD-323
Supplier Device Package : SOD-323
Operating Temperature - Junction : 150°C (Max)

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  • BAV21WS-HE3-18

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 250MA SOD323. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM