Vishay Semiconductor Diodes Division - RGL34JHE3/83

KEY Part #: K6457671

RGL34JHE3/83 Pricing (USD) [618527pcs Stock]

  • 1 pcs$0.05980
  • 9,000 pcs$0.05420

Part Number:
RGL34JHE3/83
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Thyristors - TRIACs, Transistors - Programmable Unijunction and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division RGL34JHE3/83 electronic components. RGL34JHE3/83 can be shipped within 24 hours after order. If you have any demands for RGL34JHE3/83, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGL34JHE3/83 Product Attributes

Part Number : RGL34JHE3/83
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 500MA DO213
Series : SUPERECTIFIER®
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 500mA
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 250ns
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 4pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-213AA (Glass)
Supplier Device Package : DO-213AA (GL34)
Operating Temperature - Junction : -65°C ~ 175°C

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