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  5. NTD18N06-1G

ON Semiconductor - NTD18N06-1G

KEY Part #: K6409200

[364pcs Stock]

    Part Number:
    NTD18N06-1G
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 60V 18A IPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - RF ...
    Competitive Advantage:
    We specialize in ON Semiconductor NTD18N06-1G electronic components. NTD18N06-1G can be shipped within 24 hours after order. If you have any demands for NTD18N06-1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTD18N06-1G Product Attributes

    Part Number : NTD18N06-1G
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 60V 18A IPAK
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 60 mOhm @ 9A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 30nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 710pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 2.1W (Ta), 55W (Tj)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I-PAK
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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