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  5. GA50JT12-247

GeneSiC Semiconductor - GA50JT12-247

KEY Part #: K6395707

GA50JT12-247 Pricing (USD) [896pcs Stock]

  • 1 pcs$56.45706
  • 10 pcs$52.92992
  • 25 pcs$50.45983
Part Number:
GA50JT12-247
Manufacturer:
GeneSiC Semiconductor
Detailed description:
TRANS SJT 1.2KV 50A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor GA50JT12-247 electronic components. GA50JT12-247 can be shipped within 24 hours after order. If you have any demands for GA50JT12-247, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA50JT12-247 Product Attributes

Part Number : GA50JT12-247
Manufacturer : GeneSiC Semiconductor
Description : TRANS SJT 1.2KV 50A
Series : -
Part Status : Active
FET Type : -
Technology : SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 25 mOhm @ 50A
Vgs(th) (Max) @ Id : -
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 7209pF @ 800V
FET Feature : -
Power Dissipation (Max) : 583W (Tc)
Operating Temperature : 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247AB
Package / Case : TO-247-3
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