[3099pcs Stock]
- Part Number:
- JAN1N649-1
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- DIODE GEN PURP 600V 400MA DO35.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - IGBTs - Modules and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Microsemi Corporation JAN1N649-1 electronic components. JAN1N649-1 can be shipped within 24 hours after order. If you have any demands for JAN1N649-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
JAN1N649-1 Product Attributes
Part Number :
JAN1N649-1
Manufacturer :
Microsemi Corporation
Description :
DIODE GEN PURP 600V 400MA DO35
Series :
Military, MIL-PRF-19500/240
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
600V
Current - Average Rectified (Io) :
400mA
Voltage - Forward (Vf) (Max) @ If :
1V @ 400mA
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
50nA @ 600V
Capacitance @ Vr, F :
-
Mounting Type :
Through Hole
Package / Case :
DO-204AH, DO-35, Axial
Supplier Device Package :
DO-35
Operating Temperature - Junction :
-65°C ~ 175°C
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