Taiwan Semiconductor Corporation - TSN525M60HS4G

KEY Part #: K6434716

TSN525M60HS4G Pricing (USD) [229320pcs Stock]

  • 1 pcs$0.16129

Part Number:
TSN525M60HS4G
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
DIODE GEN PURP 60V 25A 8PDFN. Schottky Diodes & Rectifiers Trench schottky 25amp 60v
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSN525M60HS4G electronic components. TSN525M60HS4G can be shipped within 24 hours after order. If you have any demands for TSN525M60HS4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSN525M60HS4G Product Attributes

Part Number : TSN525M60HS4G
Manufacturer : Taiwan Semiconductor Corporation
Description : DIODE GEN PURP 60V 25A 8PDFN
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 60V
Current - Average Rectified (Io) : 25A
Voltage - Forward (Vf) (Max) @ If : 630mV @ 25A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 500µA @ 60V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : 8-PowerTDFN
Supplier Device Package : 8-PDFN (5x6)
Operating Temperature - Junction : -55°C ~ 150°C

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