Microsemi Corporation - JAN1N6076

KEY Part #: K6449579

JAN1N6076 Pricing (USD) [4394pcs Stock]

  • 1 pcs$9.90511
  • 100 pcs$9.85583

Part Number:
JAN1N6076
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 50V 1.3A AXIAL. ESD Suppressors / TVS Diodes MIL, QPL PART, 1.3A 50V ULTRAFAST RECT
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - IGBTs - Arrays and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in Microsemi Corporation JAN1N6076 electronic components. JAN1N6076 can be shipped within 24 hours after order. If you have any demands for JAN1N6076, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N6076 Product Attributes

Part Number : JAN1N6076
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 50V 1.3A AXIAL
Series : Military, MIL-PRF-19500/503
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 1.3A
Voltage - Forward (Vf) (Max) @ If : 1.76V @ 18.8A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Current - Reverse Leakage @ Vr : 5µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : E, Axial
Supplier Device Package : E-PAK
Operating Temperature - Junction : -65°C ~ 155°C

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