Microsemi Corporation - APTGT75DH120T3G

KEY Part #: K6533099

APTGT75DH120T3G Pricing (USD) [1817pcs Stock]

  • 1 pcs$23.81987
  • 100 pcs$23.18835

Part Number:
APTGT75DH120T3G
Manufacturer:
Microsemi Corporation
Detailed description:
MOD IGBT 1200V 110A SP3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - IGBTs - Modules and Diodes - Zener - Arrays ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT75DH120T3G Product Attributes

Part Number : APTGT75DH120T3G
Manufacturer : Microsemi Corporation
Description : MOD IGBT 1200V 110A SP3
Series : -
Part Status : Active
IGBT Type : Trench Field Stop
Configuration : Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 110A
Power - Max : 357W
Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
Current - Collector Cutoff (Max) : 250µA
Input Capacitance (Cies) @ Vce : 5.34nF @ 25V
Input : Standard
NTC Thermistor : Yes
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : SP3
Supplier Device Package : SP3