Vishay Semiconductor Diodes Division - MI3035S-E3/4W

KEY Part #: K6427870

MI3035S-E3/4W Pricing (USD) [106866pcs Stock]

  • 1 pcs$0.34611
  • 1,000 pcs$0.31366

Part Number:
MI3035S-E3/4W
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE SCHOTTKY 35V 30A TO220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Power Driver Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division MI3035S-E3/4W electronic components. MI3035S-E3/4W can be shipped within 24 hours after order. If you have any demands for MI3035S-E3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MI3035S-E3/4W Product Attributes

Part Number : MI3035S-E3/4W
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE SCHOTTKY 35V 30A TO220AB
Series : -
Part Status : Active
Diode Type : Schottky
Voltage - DC Reverse (Vr) (Max) : 35V
Current - Average Rectified (Io) : 30A
Voltage - Forward (Vf) (Max) @ If : 700mV @ 30A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 200µA @ 35V
Capacitance @ Vr, F : -
Mounting Type : Through Hole
Package / Case : TO-220-3
Supplier Device Package : TO-220AB
Operating Temperature - Junction : -65°C ~ 150°C

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