ZXMN3A01E6TA Pricing (USD) [338563pcs Stock]
- 1 pcs$0.10925
- 3,000 pcs$0.09778
- Part Number:
- ZXMN3A01E6TA
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 30V 2.4A SOT-23-6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Special Purpose, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - Rectifiers - Arrays and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXMN3A01E6TA electronic components. ZXMN3A01E6TA can be shipped within 24 hours after order. If you have any demands for ZXMN3A01E6TA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3A01E6TA Product Attributes
Part Number :
ZXMN3A01E6TA
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 30V 2.4A SOT-23-6
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1.1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-6
Package / Case :
SOT-23-6
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