IRFI630GPBF Pricing (USD) [34895pcs Stock]
- 1 pcs$1.00762
- 10 pcs$0.91062
- 100 pcs$0.73159
- 500 pcs$0.56903
- 1,000 pcs$0.47148
- Part Number:
- IRFI630GPBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 200V 5.9A TO220FP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFI630GPBF electronic components. IRFI630GPBF can be shipped within 24 hours after order. If you have any demands for IRFI630GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI630GPBF Product Attributes
Part Number :
IRFI630GPBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 200V 5.9A TO220FP
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3 Full Pack, Isolated Tab
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