FDP12N60NZ Pricing (USD) [43906pcs Stock]
- 1 pcs$0.89055
- 1,000 pcs$0.31767
- Part Number:
- FDP12N60NZ
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 12A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDP12N60NZ electronic components. FDP12N60NZ can be shipped within 24 hours after order. If you have any demands for FDP12N60NZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDP12N60NZ Product Attributes
Part Number :
FDP12N60NZ
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 12A TO-220
Series :
UniFET-II™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1676pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
240W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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