Diodes Incorporated - DMN33D8LDW-7

KEY Part #: K6523033

DMN33D8LDW-7 Pricing (USD) [1180825pcs Stock]

  • 1 pcs$0.03132
  • 3,000 pcs$0.02871

Part Number:
DMN33D8LDW-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2N-CH 30V 0.25A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Special Purpose and Power Driver Modules ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN33D8LDW-7 electronic components. DMN33D8LDW-7 can be shipped within 24 hours after order. If you have any demands for DMN33D8LDW-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN33D8LDW-7 Product Attributes

Part Number : DMN33D8LDW-7
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 30V 0.25A
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 250mA
Rds On (Max) @ Id, Vgs : 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 48pF @ 5V
Power - Max : 350mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : SOT-363