STMicroelectronics - STF10N60DM2

KEY Part #: K6401502

STF10N60DM2 Pricing (USD) [50826pcs Stock]

  • 1 pcs$0.76930
  • 10 pcs$0.68150
  • 100 pcs$0.53860
  • 500 pcs$0.41769
  • 1,000 pcs$0.31193

Part Number:
STF10N60DM2
Manufacturer:
STMicroelectronics
Detailed description:
N-CHANNEL 600 V 0.26 OHM TYP..
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in STMicroelectronics STF10N60DM2 electronic components. STF10N60DM2 can be shipped within 24 hours after order. If you have any demands for STF10N60DM2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STF10N60DM2 Product Attributes

Part Number : STF10N60DM2
Manufacturer : STMicroelectronics
Description : N-CHANNEL 600 V 0.26 OHM TYP.
Series : MDmesh™ DM2
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 530 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 15nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 529pF @ 100V
FET Feature : -
Power Dissipation (Max) : 25W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FP
Package / Case : TO-220-3 Full Pack

You May Also Be Interested In