Nexperia USA Inc. - PSMN028-100YS,115

KEY Part #: K6416621

PSMN028-100YS,115 Pricing (USD) [265023pcs Stock]

  • 1 pcs$0.14026
  • 1,500 pcs$0.13956

Part Number:
PSMN028-100YS,115
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 100V 42A LFPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Power Driver Modules, Thyristors - TRIACs, Thyristors - SCRs, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PSMN028-100YS,115 electronic components. PSMN028-100YS,115 can be shipped within 24 hours after order. If you have any demands for PSMN028-100YS,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN028-100YS,115 Product Attributes

Part Number : PSMN028-100YS,115
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 100V 42A LFPAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 27.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1634pF @ 50V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : LFPAK56, Power-SO8
Package / Case : SC-100, SOT-669

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