IXYS - IXFK120N30P3

KEY Part #: K6398723

IXFK120N30P3 Pricing (USD) [7523pcs Stock]

  • 1 pcs$6.02437
  • 10 pcs$5.47790
  • 100 pcs$4.65622
  • 500 pcs$3.97148

Part Number:
IXFK120N30P3
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 300V 120A TO-264.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Thyristors - SCRs, Diodes - RF and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in IXYS IXFK120N30P3 electronic components. IXFK120N30P3 can be shipped within 24 hours after order. If you have any demands for IXFK120N30P3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFK120N30P3 Product Attributes

Part Number : IXFK120N30P3
Manufacturer : IXYS
Description : MOSFET N-CH 300V 120A TO-264
Series : HiPerFET™, Polar3™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 300V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 27 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id : 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 8630pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1130W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-264AA (IXFK)
Package / Case : TO-264-3, TO-264AA

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