IPB65R190CFDAATMA1 Pricing (USD) [44082pcs Stock]
- 1 pcs$0.88700
- 1,000 pcs$0.87490
- Part Number:
- IPB65R190CFDAATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH TO263-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPB65R190CFDAATMA1 electronic components. IPB65R190CFDAATMA1 can be shipped within 24 hours after order. If you have any demands for IPB65R190CFDAATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB65R190CFDAATMA1 Product Attributes
Part Number :
IPB65R190CFDAATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH TO263-3
Series :
Automotive, AEC-Q101, CoolMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1850pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
151W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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