DMTH8012LPSQ-13 Pricing (USD) [153564pcs Stock]
- 1 pcs$0.24086
- 2,500 pcs$0.21317
- Part Number:
- DMTH8012LPSQ-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET NCH 80V 10A POWERDI.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Arrays, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH8012LPSQ-13 electronic components. DMTH8012LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH8012LPSQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH8012LPSQ-13 Product Attributes
Part Number :
DMTH8012LPSQ-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET NCH 80V 10A POWERDI
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
17 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
46.8nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2051pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
2.6W (Ta), 136W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI5060-8
Package / Case :
8-PowerTDFN
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