DMG4466SSS-13 Pricing (USD) [644618pcs Stock]
- 1 pcs$0.05738
- 2,500 pcs$0.05168
- Part Number:
- DMG4466SSS-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 30V 10A 8SO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMG4466SSS-13 electronic components. DMG4466SSS-13 can be shipped within 24 hours after order. If you have any demands for DMG4466SSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG4466SSS-13 Product Attributes
Part Number :
DMG4466SSS-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 30V 10A 8SO
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
478.9pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
1.42W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SOP
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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