RDN100N20FU6 Pricing (USD) [1009pcs Stock]
- 1 pcs$1.32210
- 10 pcs$1.19430
- Part Number:
- RDN100N20FU6
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 200V 10A TO-220FN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor RDN100N20FU6 electronic components. RDN100N20FU6 can be shipped within 24 hours after order. If you have any demands for RDN100N20FU6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RDN100N20FU6 Product Attributes
Part Number :
RDN100N20FU6
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 200V 10A TO-220FN
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
360 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
543pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220FN
Package / Case :
TO-220-3 Full Pack
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