IXTH52N65X Pricing (USD) [13184pcs Stock]
- 1 pcs$3.45571
- 50 pcs$3.43852
- Part Number:
- IXTH52N65X
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 650V 52A TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in IXYS IXTH52N65X electronic components. IXTH52N65X can be shipped within 24 hours after order. If you have any demands for IXTH52N65X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH52N65X Product Attributes
Part Number :
IXTH52N65X
Manufacturer :
IXYS
Description :
MOSFET N-CH 650V 52A TO-247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
68 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
113nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
660W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247 (IXTH)
Package / Case :
TO-247-3
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