[13920pcs Stock]
- Part Number:
- ZXMN3A01FTC
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CH 30V 1.8A SOT23-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Diodes Incorporated ZXMN3A01FTC electronic components. ZXMN3A01FTC can be shipped within 24 hours after order. If you have any demands for ZXMN3A01FTC, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ZXMN3A01FTC Product Attributes
Part Number :
ZXMN3A01FTC
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CH 30V 1.8A SOT23-3
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
625mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SOT-23-3
Package / Case :
TO-236-3, SC-59, SOT-23-3
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