Part Number :
SSM6N55NU,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2N-CH 30V 4A UDFN6
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
4A
Rds On (Max) @ Id, Vgs :
46 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 15V
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
6-WDFN Exposed Pad
Supplier Device Package :
6-µDFN(2x2)