Vishay Semiconductor Diodes Division - VS-20ETS12-M3

KEY Part #: K6434411

VS-20ETS12-M3 Pricing (USD) [32357pcs Stock]

1 pcs$1.27369
1,000 pcs$1.08976

Part Number:: VS-20ETS12-M3

Manufacturer:: Vishay Semiconductor Diodes Division

Detailed description:: DIODE GEN PURP 1.2KV 20A TO220AB. Rectifiers New Input Diodes - TO-220-e3

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Diodes - Zener - Single, Diodes - Rectifiers - Arrays and Diodes - Bridge Rectifiers ...

Competitive Advantage:: We specialize in Vishay Semiconductor Diodes Division VS-20ETS12-M3 electronic components. VS-20ETS12-M3 can be shipped within 24 hours after order. If you have any demands for VS-20ETS12-M3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

VS-20ETS12-M3 Product Attributes

Part Number : VS-20ETS12-M3

Manufacturer : Vishay Semiconductor Diodes Division

Description : DIODE GEN PURP 1.2KV 20A TO220AB

Series : -

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 1200V

Current - Average Rectified (Io) : 20A

Voltage - Forward (Vf) (Max) @ If : 1V @ 10A

Speed : Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr) : -

Current - Reverse Leakage @ Vr : 100µA @ 1200V

Capacitance @ Vr, F : -

Mounting Type : Through Hole

Package / Case : TO-220-3

Supplier Device Package : TO-220AB

Operating Temperature - Junction : -40°C ~ 150°C

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