STGW80H65DFB Pricing (USD) [11588pcs Stock]
- 1 pcs$3.30525
- 10 pcs$2.98486
- 100 pcs$2.47100
- 500 pcs$2.15172
- 1,000 pcs$1.87408
- Part Number:
- STGW80H65DFB
- Manufacturer:
- STMicroelectronics
- Detailed description:
- IGBT 650V 120A 469W TO-247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in STMicroelectronics STGW80H65DFB electronic components. STGW80H65DFB can be shipped within 24 hours after order. If you have any demands for STGW80H65DFB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGW80H65DFB Product Attributes
Part Number :
STGW80H65DFB
Manufacturer :
STMicroelectronics
Description :
IGBT 650V 120A 469W TO-247
Series :
-
Part Status :
Active
IGBT Type :
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) :
650V
Current - Collector (Ic) (Max) :
120A
Current - Collector Pulsed (Icm) :
240A
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 80A
Power - Max :
469W
Switching Energy :
2.1mJ (on), 1.5mJ (off)
Input Type :
Standard
Gate Charge :
414nC
Td (on/off) @ 25°C :
84ns/280ns
Test Condition :
400V, 80A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
85ns
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
Supplier Device Package :
TO-247
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