HGT1S10N120BNST Pricing (USD) [51869pcs Stock]
- 1 pcs$0.96859
- 800 pcs$0.96377
- 1,600 pcs$0.81282
- 2,400 pcs$0.77411
- Part Number:
- HGT1S10N120BNST
- Manufacturer:
- ON Semiconductor
- Detailed description:
- IGBT 1200V 35A 298W TO263AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor HGT1S10N120BNST electronic components. HGT1S10N120BNST can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNST Product Attributes
Part Number :
HGT1S10N120BNST
Manufacturer :
ON Semiconductor
Description :
IGBT 1200V 35A 298W TO263AB
Series :
-
Part Status :
Active
IGBT Type :
NPT
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
35A
Current - Collector Pulsed (Icm) :
80A
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Power - Max :
298W
Switching Energy :
320µJ (on), 800µJ (off)
Input Type :
Standard
Gate Charge :
100nC
Td (on/off) @ 25°C :
23ns/165ns
Test Condition :
960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
TO-263AB
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