IRL2203NSTRLPBF Pricing (USD) [78388pcs Stock]
- 1 pcs$0.49881
- 800 pcs$0.43164
- Part Number:
- IRL2203NSTRLPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 116A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Rectifiers - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRL2203NSTRLPBF electronic components. IRL2203NSTRLPBF can be shipped within 24 hours after order. If you have any demands for IRL2203NSTRLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL2203NSTRLPBF Product Attributes
Part Number :
IRL2203NSTRLPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 116A D2PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 4.5V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
3290pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 180W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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