Infineon Technologies - IRF3315PBF

KEY Part #: K6398967

IRF3315PBF Pricing (USD) [53440pcs Stock]

  • 1 pcs$0.79021
  • 10 pcs$0.70157
  • 100 pcs$0.55436
  • 500 pcs$0.42992
  • 1,000 pcs$0.32107

Part Number:
IRF3315PBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 150V 23A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Power Driver Modules, Transistors - JFETs, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IRF3315PBF electronic components. IRF3315PBF can be shipped within 24 hours after order. If you have any demands for IRF3315PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF3315PBF Product Attributes

Part Number : IRF3315PBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 150V 23A TO-220AB
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 70 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 95nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 94W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3

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