STO36N60M6 Pricing (USD) [34116pcs Stock]
- 1 pcs$1.20805
- Part Number:
- STO36N60M6
- Manufacturer:
- STMicroelectronics
- Detailed description:
- N-CHANNEL 600 V 0.85 OHM TYP..
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in STMicroelectronics STO36N60M6 electronic components. STO36N60M6 can be shipped within 24 hours after order. If you have any demands for STO36N60M6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STO36N60M6 Product Attributes
Part Number :
STO36N60M6
Manufacturer :
STMicroelectronics
Description :
N-CHANNEL 600 V 0.85 OHM TYP.
Series :
MDmesh™ M6
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
44.3nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
1960pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
230W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TOLL (HV)
Package / Case :
8-PowerSFN
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